Time-resolved photoluminescence of quaternary AlInGaN-based multiple quantum wells
Identifieur interne : 00E176 ( Main/Repository ); précédent : 00E175; suivant : 00E177Time-resolved photoluminescence of quaternary AlInGaN-based multiple quantum wells
Auteurs : RBID : Pascal:02-0255379Descripteurs français
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- 7867D, 7866F, 7855C, 7847, 8105E, 7321F, 8107S, 7321C, 7135, Etude expérimentale, Aluminium composé, Indium composé, Gallium composé, Semiconducteur III-V, Semiconducteur bande interdite large, Spectre résolution temporelle, Photoluminescence, Puits quantique semiconducteur, Superréseau semiconducteur, Durée vie radiative, Exciton, Etat interface.
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Abstract
Time-resolved photoluminescence (PL) dynamics has been studied in AlInGaN/AlInGaN multiple quantum wells (MQWs) grown by a pulsed metalorganic chemical vapor deposition (PMOCVD) procedure. The PL decay kinetics was found to be sensitive to the emission energy and temperature. The PL decay time increases with decreasing emission energy, which is a characteristic of localized carrier/exciton recombination due to alloy fluctuations. Its temperature dependence shows radiative recombination to be the dominant process at low temperatures, indicating a high quality of PMOCVD grown quaternary AlInGaN MQWs and establishing them as promising structures for the active region of deep ultraviolet light emitting diodes. © 2002 American Institute of Physics.
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Chen</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Sud</region></placeName><wicri:cityArea>Department of Electrical Engineering, University of South Carolina, Columbia</wicri:cityArea></affiliation></author><author><name sortKey="Kuokstis, E" uniqKey="Kuokstis E">E. Kuokstis</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Sud</region></placeName><wicri:cityArea>Department of Electrical Engineering, University of South Carolina, Columbia</wicri:cityArea></affiliation></author><author><name sortKey="Yang, J W" uniqKey="Yang J">J. W. Yang</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Sud</region></placeName><wicri:cityArea>Department of Electrical Engineering, University of South Carolina, Columbia</wicri:cityArea></affiliation></author><author><name sortKey="Simin, G" uniqKey="Simin G">G. Simin</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Sud</region></placeName><wicri:cityArea>Department of Electrical Engineering, University of South Carolina, Columbia</wicri:cityArea></affiliation></author><author><name sortKey="Khan, M Asif" uniqKey="Khan M">M. Asif Khan</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Sud</region></placeName><wicri:cityArea>Department of Electrical Engineering, University of South Carolina, Columbia</wicri:cityArea></affiliation></author><author><name sortKey="Sim, G G" uniqKey="Sim G">G. G. Sim</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Information and Communications, Kwangju Institute of Science and Technology, Kwangju 500-712, Korea</s1><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">Corée du Sud</country><wicri:regionArea>Department of Information and Communications, Kwangju Institute of Science and Technology, Kwangju 500-712</wicri:regionArea><wicri:noRegion>Kwangju 500-712</wicri:noRegion></affiliation></author><author><name sortKey="Yu, P W" uniqKey="Yu P">P. W. Yu</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Information and Communications, Kwangju Institute of Science and Technology, Kwangju 500-712, Korea</s1><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">Corée du Sud</country><wicri:regionArea>Department of Information and Communications, Kwangju Institute of Science and Technology, Kwangju 500-712</wicri:regionArea><wicri:noRegion>Kwangju 500-712</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">02-0255379</idno><date when="2002-05-27">2002-05-27</date><idno type="stanalyst">PASCAL 02-0255379 AIP</idno><idno type="RBID">Pascal:02-0255379</idno><idno type="wicri:Area/Main/Corpus">00F446</idno><idno type="wicri:Area/Main/Repository">00E176</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium compounds</term><term>Excitons</term><term>Experimental study</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Interface states</term><term>Photoluminescence</term><term>Radiative lifetimes</term><term>Semiconductor quantum wells</term><term>Semiconductor superlattices</term><term>Time resolved spectra</term><term>Wide band gap semiconductors</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7867D</term><term>7866F</term><term>7855C</term><term>7847</term><term>8105E</term><term>7321F</term><term>8107S</term><term>7321C</term><term>7135</term><term>Etude expérimentale</term><term>Aluminium composé</term><term>Indium composé</term><term>Gallium composé</term><term>Semiconducteur III-V</term><term>Semiconducteur bande interdite large</term><term>Spectre résolution temporelle</term><term>Photoluminescence</term><term>Puits quantique semiconducteur</term><term>Superréseau semiconducteur</term><term>Durée vie radiative</term><term>Exciton</term><term>Etat interface</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Time-resolved photoluminescence (PL) dynamics has been studied in AlInGaN/AlInGaN multiple quantum wells (MQWs) grown by a pulsed metalorganic chemical vapor deposition (PMOCVD) procedure. The PL decay kinetics was found to be sensitive to the emission energy and temperature. The PL decay time increases with decreasing emission energy, which is a characteristic of localized carrier/exciton recombination due to alloy fluctuations. Its temperature dependence shows radiative recombination to be the dominant process at low temperatures, indicating a high quality of PMOCVD grown quaternary AlInGaN MQWs and establishing them as promising structures for the active region of deep ultraviolet light emitting diodes. © 2002 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>80</s2></fA05><fA06><s2>21</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Time-resolved photoluminescence of quaternary AlInGaN-based multiple quantum wells</s1></fA08><fA11 i1="01" i2="1"><s1>RYU (Mee-Yi)</s1></fA11><fA11 i1="02" i2="1"><s1>CHEN (C. 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